MCD132-14IO1 phase leg thyristor \ diode module 3 1 2 5 4 part number MCD132-14IO1 backside: isolated tav t v v 1.08 rrm 130 1400 = v = v i = a 2x features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability direct copper bonded al2o3-ceramic line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control y4 industry standard outline rohs compliant soldering pins for pcb mounting base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20160408b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCD132-14IO1 v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i v i a v t 1.14 r 0.23 k/w min. 130 v v 200 t = 25c vj t = c vj ma 10 v = v t = 25c vj i = a t v t = c c 85 p tot 435 w t = 25c c 150 1400 forward voltage drop total power dissipation conditions unit 1.36 t = 25c vj 125 v t0 v 0.80 t = c vj 125 r t 1.5 m ? v 1.08 t = c vj i = a t v 150 1.36 i = a 300 i = a 300 threshold voltage slope resistance for power loss calculation only a 125 v v 1400 t = 25c vj i a 300 p gm w t = 30 s 120 max. gate power dissipation p t = c c 125 w t = 60 p p gav w 8 average gate power dissipation c j 211 junction capacitance v = v400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 125 i2t t = 45c value for fusing t = c 125 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 125 4.75 5.13 81.6 79.1 ka ka ka ka 4.04 4.36 112.8 109.5 1400 500 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 150 repetitive, i = t vj = 125 c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v = 6 v t = c25 (dv/dt) t = 125c critical rate of rise of voltage a/s 500 v/s t = s; i a; v = ? v r = ; method 1 (linear voltage rise) vj d vj 500 a t pg = 0.5 di /dt a/s; g = 0.5 drm cr v = ? v drm gk 1000 2.5 v t = c -40 vj i gt gate trigger current v = 6 v t = c25 d vj 150 ma t = c -40 vj 2.6 v 200 ma v gd gate non-trigger voltage t = c vj 0.2 v i gd gate non-trigger current 10 ma v = ? v d drm 125 latching current t = c vj 300 ma i l 25 t s p = 30 i a; g = 0.5 di /dt a/s g = 0.5 holding current t = c vj 200 ma i h 25 v = 6 v d r = gk gate controlled delay time t = c vj 2 s t gd 25 i a; g = 0.5 di /dt a/s g = 0.5 v = ? v d drm turn-off time t = c vj 150 s t q di/dt = a/s 10 dv/dt = v/s 20 v = r 100 v; i a; t = 160 v = ? v drm t s p = 200 non-repet., i = 160 a t 100 r thch 0.100 thermal resistance case to heatsink k/w rectifier 1500 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltag e max. repetitive reverse/forward blocking voltage r/d reverse current, drain current tt r/d r/d 200 ixys reserves the right to change limits, condition s and dimensions. 20160408b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCD132-14IO1 ratings part number yywwaa date code (dc) + production index (pi) lot.no: xxxxxx data matrix: part no. (1-19), dc + pi (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) circuit package t op c m d nm 2.75 mounting torque 2.25 t vj c 125 virtual junction temperature -40 weight g 150 symbol definition typ. max. min. conditions operation temperature unit m t nm 5.5 terminal torque 4.5 v v t = 1 second v t = 1 minute isolation voltage mm mm 14.0 10.0 16.0 16.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 300 a per terminal 100 -40 terminal to terminal y4 delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MCD132-14IO1 430617 box 6 MCD132-14IO1 standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.8 m ? v 0 max r 0 max slope resistance * 0.8 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 125 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20160408b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCD132-14IO1 3 1 2 5 4 outlines y4 ixys reserves the right to change limits, condition s and dimensions. 20160408b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCD132-14IO1 0 25 50 75 100 125 150 t a [c] t c [c] t [ms] t [s] 0.001 0.01 0.1 1 0 1000 2000 3000 4 0 00 01 1 10 4 10 5 10 6 0 25 50 75 100 125 150 0 40 80 120 160 200 240 280 3 20 i tsm [a] i tavm [a] 0 50 100 150 200 250 0 40 80 120 160 200 240 280 320 360 400 p tot [w] i tavm [a] 0 25 50 75 100 125 150 0 100 200 300 400 500 0 200 400 600 800 1000 1200 1400 i 2 dt [a 2 s] t vj = 45c 180 sin 120 60 30 dc t vj = 125c 50 hz 80% v rrm t vj = 45c t vj = 125c r thka k/w 0.3 0.4 0.5 0.6 0.8 1.0 1.4 1.8 p tot [w] i davm [a] t a [c] b6 circuit 3xmcc132 or 3x mcd132 fig. 1 surge overload current i tsm , i fsm : crest value, t: duration fig. 2 i 2 t versus time (1-10 ms) fig. 3 max. forward current at case temperature fig. 4 power dissipation vs. on-state current & ambient temp erature (per thyristor or diode) fig. 5 gate trigger characteristics fig. 6 three phase rectifier bridge: power dissipation vers us direct output current and ambient temperature fig. 7 gate trigger delay time 180 sin 120 60 30 dc r thka k/w 0.2 0.08 0.1 0.15 0.04 0.06 0.03 0.3 0.01 0.1 1 10 0.1 1 10 100 0.01 0.1 1 10 0.1 1 10 100 i g [a] v g [v] i g [a] t vj = 25c t gd [s] i gt (t vj = -40c) i gt (t vj = 0c) i gt (t vj = 25c) 125c 25c limit typ. t p = 30 s t p = 500 s p gm = 120 w 60 w p gav = 8 w i gd thyristor ixys reserves the right to change limits, condition s and dimensions. 20160408b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCD132-14IO1 0 100 200 300 400 0 400 800 1200 1600 t [s] 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.0 0.1 0.2 0.3 0.4 0.5 z thjc [k/ w] i rms [a] p tot [ w] 0 25 50 75 100 125 150 t a [c] 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.0 0.1 0.2 0.3 0.4 circuit w3 3xmcc132 or 3xmcd132 z thjk [k/w] t [s] dc 180 120 60 30 fig. 8 three phase ac-controller: power dissipation versus rms output current and ambient temperature fig. 9 transient thermal impedance junction to case (per thyri stor/diode) f i g. 10 transie n t therma l im p edance j un c ti o n to he a ts i n k ( p e r thyristor/di o de ) r thjc for various conduction angles d: d r thjc [k/w] dc 0.230 180 0.244 120 0.255 60 0.283 30 0.321 constants for z thjc calculation: i r thi [k/w] t i [s] 1 0.0095 0.001 2 0.0175 0.065 3 0.2030 0.400 r thjk for various conduction angles d: d r thjk [k/w] dc 0.330 180 0.344 120 0.355 60 0.383 30 0.421 constants for z thjk calculation: i r thi [k/w] t i [s] 1 0.0095 0.001 2 0.0175 0.065 3 0.2030 0.400 4 0.1000 1.290 0.15 0.1 0.08 r thka k/w 0.2 0.03 0.04 0.06 0.3 dc 180 120 60 30 rectifier ixys reserves the right to change limits, condition s and dimensions. 20160408b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
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